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Freescale Semiconductor Technical Data
Document Number: MRF6S21100N Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1050 mA, Pout = 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 14.5 dB Drain Efficiency -- 25.5% IM3 @ 10 MHz Offset -- - 37 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset -- - 40 dBc in 3.84 MHz Bandwidth * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * 200C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S21100NR1 MRF6S21100NBR1
2110 - 2170 MHz, 23 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S21100NR1
CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S21100NBR1
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +68 - 0.5, +12 307 1.75 - 65 to +175 200 Unit Vdc Vdc W W/C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 100 W CW Case Temperature 73C, 23 W CW Symbol RJC Value (1,2) 0.57 0.66 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S21100NR1 MRF6S21100NBR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 330 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1050 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2.2 Adc) Dynamic Characteristics(1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.5 -- pF VGS(th) VGS(Q) VDS(on) gfs 1 2 -- -- 2 2.8 0.24 5.3 3 4 -- -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset.. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion) Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D IM3 ACPR IRL 13 24 - 47 - 50 -- 14.5 25.5 - 37 - 40 - 12 16 36 - 35 - 38 - 10 dB % dBc dBc dB
MRF6S21100NR1 MRF6S21100NBR1 2 RF Device Data Freescale Semiconductor
R1 VBIAS + C1 R2 C2
B1 VSUPPLY C3 R3 Z5 Z12 C4 C5 C6 RF OUTPUT
RF INPUT
Z6 Z1 C7 Z2 Z3 Z4 Z11 C8 DUT
Z7
Z8
Z9 C9
Z10
VSUPPLY C10 C11 C12
Z1, Z10 Z2 Z3 Z4 Z5 Z6
0.743 x 0.084 Microstrip 0.893 x 0.084 Microstrip 0.175 x 0.084 Microstrip 0.420 x 0.800 Microstrip 1.231 x 0.040 Microstrip 0.100 x 0.880 Microstrip
Z7 Z8 Z9 Z11, Z12 PCB
0.259 x 0.880 Microstrip 0.215 x 0.230 Microstrip 0.787 x 0.084 Microstrip 1.171 x 0.120 Microstrip Arlon AD250, 0.030, r = 2.5
Figure 1. MRF6S21100NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values
Part B1 C1 C2 C3, C4, C10 C5, C6, C11, C12 C7 C8 C9 R1 R2 R3 Description Ferrite Bead (0805) 10 F, 35 V Tantalum Capacitor 0.01 F Chip Capacitor (1825) 5.1 pF 600B Chip Capacitors 10 F, 50 V Chip Capacitors 10 pF 600B Chip Capacitor 1.1 pF 600B Chip Capacitor 5.1 pF 600 B Chip Capacitor (MRF6S21100NR1) 8.2 pF 600 B Chip Capacitor (MRF6S21100NBR1) 1 k, 1/4 W Chip Resistor (1206) 10 k, 1/4 W Chip Resistor (1206) 10 , 1/4 W Chip Resistor (1206) Part Number 25008051107Y0 T491D106K035AS C1825C103J1GAC 600B5R1BT250XT GRM55DR61H106KA88L 600B100BT250XT 600B1R1BT250XT 600B5R1BT250XT 600B8R2BT250XT Manufacturer Fair- Rite Kemet Kemet ATC Murata ATC ATC ATC ATC
MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 3
B1 R3 R1 R2 C2 C1
C3 C4
C5
C6
C7
C8
CUT OUT AREA
C9
C11 C12
MRF6S21100N/NB, Rev. 3
C10
Figure 2. MRF6S21100NR1(NBR1) Test Circuit Component Layout
MRF6S21100NR1 MRF6S21100NBR1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, Pout = 22.5 W (Avg.), IDQ = 1050 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
14.8 14.6 Gps, POWER GAIN (dB) 14.4 14.2 14 13.8 13.6 13.4 13.2 13 2060 2080 D
27 26 25
Gps IM3 ACPR IRL 2100 2120 2140 2160 2180 2200
IM3 (dBc), ACPR (dBc)
-31 -34 -37 -40 -43 -46 2220 2240
-9 -10 -11 -12 -13 -14
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 22.5 Watts Avg.
14 13.8 Gps, POWER GAIN (dB) 13.6 13.4 13.2 13 12.8 12.6 12.4
D
37 36 35
VDD = 28 Vdc, Pout = 45 W (Avg.), IDQ = 1050 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3
IM3 (dBc), ACPR (dBc)
-24 -26 -28
-9 -10 -11 -12 -13 -14
ACPR IRL 2100 2120 2140 2160 2180 2200
-30 -32 -34 2220 2240
12.2 2060 2080
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 45 Watts Avg.
16 IDQ = 1575 mA 15 Gps, POWER GAIN (dB) 14 13 12 11 10 787 mA 1312 mA 1050 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -10 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing -20 1575 mA IDQ = 525 mA -40 1312 mA -50 787 mA -60 0.1 1 10 100 300 1050 mA
-30
525 mA
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing 0.1 1 10 100 1000
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 5
IRL, INPUT RETURN LOSS (dB)
Gps
34
D, DRAIN EFFICIENCY (%)
14.2
38
IRL, INPUT RETURN LOSS (dB)
24
D, DRAIN EFFICIENCY (%)
15
28
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
0 -10 -20 -30 -40 -50 -60 0.1 3rd Order 5th Order VDD = 28 Vdc, Pout = 100 W (PEP) IDQ = 1050 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz
58 Ideal Pout , OUTPUT POWER (dBm) 56 P3dB = 51.9 dBm (156.3 W) 54 P1dB = 51.3 dBm (135.8 W) 52 Actual
50
7th Order 48 1 10 100 300 32 34 36 38
VDD = 28 Vdc, IDQ = 1050 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 2140 MHz 40 42 44 46
TWO-TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products versus Tone Spacing
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 40 35 30 25 20 TC = 25_C 15 10 5 0 0.5 1 10 25_C 85_C Gps
Figure 8. Pulse CW Output Power versus Input Power
IM3 -30_C
-40 -45 -50 -55 -60 100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
18 17 Gps, POWER GAIN (dB) 16 TC = -30_C 15 25_C 14 13 12 11 0.1 1 10 100 300 Pout, OUTPUT POWER (WATTS) CW D 85_C 30 20 10 0 VDD = 28 Vdc IDQ = 1050 mA f = 2140 MHz Gps 85_C -30_C 25_C 70 60 D, DRAIN EFFICIENCY (%) 50 40 Gps, POWER GAIN (dB) 15 14 13 12 32 V 11 10 VDD = 12 V 9 0 20 40 60 80 100 120 140 160 180 200 Pout, OUTPUT POWER (WATTS) CW 16 V 20 V 24 V IDQ = 1050 mA f = 2140 MHz 28 V
Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21100NR1 MRF6S21100NBR1 6
Figure 11. Power Gain versus Output Power
IM3 (dBc), ACPR (dBc)
-20 VDD = 28 Vdc, IDQ = 1050 mA, f1 = 2135 MHz -30_C 25_C -25 f2 = 2145 MHz, 2-Carrier W-CDMA D 10 MHz Carrier Spacing, 3.84 MHz 25_C Channel Bandwidth, PAR = 8.5 dB -30_C -30 @ 0.01% Probability (CCDF) 85_C -35 ACPR
RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
109 MTTF FACTOR (HOURS x AMPS2)
108
107
106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF
+20 +30 0 -10 -20 -30 -40 -50 -60 -70 -80 -25
3.84 MHz Channel BW
-ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW -IM3 in 3.84 MHz BW -20 -15 -10 -5 0 5 10
+IM3 in 3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal
Figure 14. 2-Carrier W-CDMA Spectrum
MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 7
Zo = 5
Zo = 5
f = 2110 MHz Zsource f = 2170 MHz f = 2170 MHz f = 2170 MHz
Zsource
f = 2110 MHz
f = 2170 MHz
Zload
f = 2110 MHz
Zload
f = 2110 MHz
MRF6S21100NR1 VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg. f MHz 2110 2140 2170 Zsource 3.51 - j3.78 3.50 - j3.83 3.29 - j3.78 Zload 1.62 - j3.54 1.51 - j3.26 1.41 - j2.95
MRF6S21100NBR1 VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg. f MHz 2110 2140 2170 Zsource 3.56 - j3.92 3.55 - j3.97 3.34 - j3.90 Zload 1.62 - j3.47 1.53 - j3.19 1.44 - j2.89
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21100NR1 MRF6S21100NBR1 8 RF Device Data Freescale Semiconductor
NOTES
MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 9
NOTES
MRF6S21100NR1 MRF6S21100NBR1 10 RF Device Data Freescale Semiconductor
NOTES
MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 11
PACKAGE DIMENSIONS
B E1 E3
2X
A
GATE LEAD
DRAIN LEAD
D1
4X
D e
4X
aaa
M
b1 CA
D2 c1 H
DATUM PLANE ZONE J
2X
2X
E
F
A1 A2 E2 E5 E4
2X
A
NOTE 7
C
SEATING PLANE
PIN 5
NOTE 8
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 --- .551 .559 .353 .357 .132 .140 .124 .132 .270 --- .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 --- 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 --- 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10
4
D3
3
MRF6S21100NR1 MRF6S21100NBR1 12 RF Device Data Freescale Semiconductor
CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC
E5 BOTTOM VIEW
1
2
DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa
CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6S21100NR1
STYLE 1: PIN 1. 2. 3. 4. 5.
MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 13
MRF6S21100NR1 MRF6S21100NBR1 14 RF Device Data Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 15
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MRF6S21100NR1 MRF6S21100NBR1
Rev. 16 1, 5/2006 Document Number: MRF6S21100N
RF Device Data Freescale Semiconductor

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